clairex technologies, inc. 1301 east plano parkway plano, texas 75074-8524 phone: 972-265-4900 fax: 972-265-4949 www.clairex.co m clairex reserves the ri g ht to make chan g es at an y time to im p rove desi g n and to p rovide the best p ossible p roduct. CLE400F- 850 four leaded multiple emitter chip surface mount package clairex ? technologies, inc . march, 2002 features ? 70 emission angle ? wide variety of chip combinations ? wide variety of lenses and apertures description the CLE400F-850 contains three 850 nm ired chips which feature double/ double heterojunction (ddh) construction for increased quantum efficiency and reliability. this device is one example of a very broad line of devices made possible by four leaded package configuration. one to three chips can be attached. multiple chip devices can be series or parallel connected. wavelengths can range from ultra-violet (400nm) through the visible spectrum into the near infrared (940nm). also different lenses, apertures and lead configurations are available. the standard lensing is clear epoxy. absolute maximum ratings (t a = 25c unless otherwise stated) storage temperatur e........................................................................-40 c to +100c operating temperat ure.....................................................................- 40c to +100c lead soldering temperature (1) ........................................................................... 240c maximum continuous current (2) ..........................................................20ma/ per chip peak forward current (10 s pulse width, 100pps) ................................................ 1a reverse voltage ..................................................................................................... 3v maximum power dissipation (3) .........................................................................80mw notes: 1. for 5 seconds maximum. maximum temperature can be 260c if reflow soldering. 2. derate linearly 0.213ma/c fr om 25c free air temperature to t a = +100c. 3. derate linearly 0.85mw/c fr om 25c free air temperature to t a = +100c. ? electrical characteristics (t a = 25c unless otherwise noted) symbol parameter min typ max units test conditions p o total power output (4) 9.0 13.0 - mw i f = 60ma (total cathode current) v f forward voltage - - 1.4 v i f = 20ma per chip i r reverse current - - 10 a v r = 3v p peak wavelength emission - 850 - nm i f = 20ma bw spectral bandwidth at half power points - 60 - nm i f = 20ma hp emission angle at half power points - 140 - deg. i f = 20ma note : 4. power output is measured in an integrating sphere. all dimensions are in inches (millimeters). unless otherwise indicated , tolerance is 0.005 ( 0.12 ) pin 1 mark 0.110 (2.81) 0.038 (0.97) 0.006 (0.15) 0.028 (0.71) 0.006 (0.15) 0.032 (0.81) 0.056 (1.42) 0.066 (0.68) 0.063 (1.60) 0.063 (1.60) 0.275 0.010 0.056 (1.42) 0 25 (0.63) 0.012 (0.30) (6.99 0.25) 1 234 0.075 (1.89) 1 2 3 4 0.025 (0.63) revised 12/01/04
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